Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 5, Pages 670-673Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2903184
Keywords
Inverter; recessed channel; ring oscillator (RO); silicon carbide (4H-SiC); static CMOS
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Funding
- Knut and Alice Wallenberg Foundation
- Swedish Foundation for Strategic Research
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Digital electronics in SiC find use in high-temperature applications. The objective of this study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a recessed channel CMOS process. Selective doping is achieved by etching epitaxial layers into mesas. A deposited SiO2-film, post-annealed at low temperature and re-oxidized in pyrogenic steam, is used as the gate oxide to produce a conformal gate oxide over the non-planar topography. PMOS, NMOS, inverters, and ring oscillators are characterized at 200 degrees C. The PMOS requires reduced threshold voltage in order to enable long-term reliability. This result demonstrates that it is possible to fabricate SiC CMOS without ion implantation and by low-temperature processing.
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