Journal
HIGH ENERGY CHEMISTRY
Volume 53, Issue 2, Pages 162-166Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0018143919020152
Keywords
nanotubes; electrical discharge; plasma chemistry; silicon nanostructures; silicon nanotubes
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Funding
- Russian Foundation for Basic Research [18-43-160005]
- Administration of the Republic of Tatarstan [3.6564.2017/BCh]
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The paper presents methods for growing silicon nanotubes using an electric discharge with different values of the electric field strength in the interelectrode gap. It is shown that the shapes of the grown nanomaterials are significantly influenced by both the surrounding gaseous medium and the electric field strength in the interelectrode gap. The silicon nanostructures obtained have been a rather complex and, at the same time, definitely regular configuration and can be widely used in electronics, photovoltaics, batteries, and even as structural elements in composite materials.
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