Ferroelectric domain dynamics and stability in graphene oxide-P(VDF-TrFE) multilayer films for ultra-high-density memory application

The rapid growth of miniaturized electronic devices has raised the demand for compact, flexible, wearable, and non-volatile memory units. However, integration into nanoelectronic devices requires a scaled-down data-storage component, but this often results in the deterioration of the ferroelectric switching performance. Herein, we demonstrate a simple and scalable fabrication of poly (vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] film with graphene oxide (GO) nanosheets. Using piezoresponse force microscopy (PFM), the storage features of this multilayer film were investigated, including establishment of two stable memory states, ferroelectric switching dynamics in the point-polarization and linear-polarization modes, and time and thermal stability of information storage. Remarkably, the GO-P(VDF-TrFE) film favored formation of low-temperature (LT) ferroelectric phase with much more ordered sequences of trans conformations relative to pristine P(VDF-TrFE) due to the presence of electrostatic interaction between GO nanosheets and C-F dipoles of P(VDF-TrFE), thus affording improved ferroelectric properties. The GO-P(VDF-TrFE) film showed several excellent storage features, such as ultra-high density of more than 300 Gbits in(-2), good writing & erasing repeatability, long data retention time, and elevated device operation temperature. In-depth understanding and utilization of the excellent non-volatile memory performance of this new GO-ferroelectric system will open new avenues for the next generation of nanoelectronic devices. (C) 2018 Elsevier Ltd. All rights reserved.