Journal
APPLIED SURFACE SCIENCE
Volume 473, Issue -, Pages 190-193Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2018.12.119
Keywords
Topological insulators; ARPES; Thin films; PLD; Surface states
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Funding
- NOXSS PRIN [2012Z3N9R9]
- MIUR, Italy
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We report on the reproducible surface topological electron states in Bi2Se3 topological insulator thin films when epitaxially grown by Pulsed Laser Deposition (PLD) on (001)-oriented SrTiO3 (STO) perovskite substrates. Bi2Se3 has been reproducibly grown with single (001)-orientation and low surface roughness as controlled by ex-situ X-ray diffraction and in situ scanning tunnel microscopy and low-energy electron diffraction. Finally, in situ synchrotron radiation angle-resolved photo-emission spectroscopy measurements show a single Dirac cone and Dirac point at E-B similar to 0.38 eV located in the center of the Brillouin zone likewise found from exfoliated singlecrystals. These results demonstrate that the topological surface electron properties of PLD-grown Bi2Se3 thin films grown on (001)-oriented STO substrates open new perspectives for applications of multi-layered materials based on oxide perovskites.
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