High field-emission current density from -Ga2O3 nanopillars

Field emission from gallium oxide (-Ga2O3) nanopillars, etched by Ne+ ion milling on -polymorph (100) single crystals, is reported. A stable field emission current, with a record density over 100A/cm(2) and a turn on field of approximate to 30V/m, is achieved. We expect that the high field enhancement factor of about 200 at a cathode-anode distance of 1m can be further increased by optimizing the shape of the nanopillar apex. This work demonstrates that the material properties combined with an appropriate nano-patterning can make -Ga2O3 competitive or better than other well-established field emitters.