Related references
Note: Only part of the references are listed.Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes
Jae Hyung Lee et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Graphene/Semiconductor Hybrid Heterostructures for Optoelectronic Device Applications
Chao Xie et al.
NANO TODAY (2018)
Comparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS2 flake based field effect transistors on SiO2 and hBN substrates
Changhee Lee et al.
NANOTECHNOLOGY (2018)
Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed
Huijun Tian et al.
OPTICS EXPRESS (2018)
Schottky Barrier Diode Characteristics of Graphene-GaN Heterojunction with Hexagonal Boron Nitride Interfacial Layer
Golap Kalita et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2018)
Hybrid graphene/unintentionally doped GaN ultraviolet photodetector with high responsivity and speed
Huijun Tian et al.
APPLIED PHYSICS LETTERS (2018)
Switching isotropic and anisotropic graphene growth in a solid source CVD system
Balaram Paudel Jaisi et al.
CRYSTENGCOMM (2018)
Graphene integration with nitride semiconductors for high power and high frequency electronics
F. Giannazzo et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric
Xing Lu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Ultraviolet-light-driven enhanced hysteresis effect in graphene-tungsten disulfide heterostructures
Muhammad Zahir Iqbal et al.
CARBON (2017)
Temperature dependent diode and photovoltaic characteristics of graphene-GaN heterojunction
Golap Kalita et al.
APPLIED PHYSICS LETTERS (2017)
Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode
Ashutosh Kumar et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes
Nisha Prakash et al.
APPLIED PHYSICS LETTERS (2016)
Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer
Martin Heilmann et al.
NANO LETTERS (2016)
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Edward A. Jones et al.
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS (2016)
Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures
Ling Sang et al.
APPLIED PHYSICS LETTERS (2015)
Piezo-Phototronic Effect Controlled Dual-Channel Visible light Communication (PVLC) Using InGaN/GaN Multiquantum Well Nanopillars
Chunhua Du et al.
SMALL (2015)
Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
Liancheng Wang et al.
NANO ENERGY (2015)
Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe
Yow-Jon Lin et al.
APPLIED SURFACE SCIENCE (2014)
A Survey of Wide Bandgap Power Semiconductor Devices
Jose Millan et al.
IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)
Fabrication of a Schottky junction diode with direct growth graphene on silicon by a solid phase reaction
Golap Kalita et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2013)
Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes
S. Chandramohan et al.
APPLIED PHYSICS LETTERS (2012)
InGaN-Based p-i-n Solar Cells with Graphene Electrodes
Jae-Phil Shim et al.
APPLIED PHYSICS EXPRESS (2011)
Graphene/GaN Schottky diodes: Stability at elevated temperatures
S. Tongay et al.
APPLIED PHYSICS LETTERS (2011)
Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes
D. Donoval et al.
JOURNAL OF APPLIED PHYSICS (2011)
Hysteresis of Electronic Transport in Graphene Transistors
Haomin Wang et al.
ACS NANO (2010)
Graphene-On-Silicon Schottky Junction Solar Cells
Xinming Li et al.
ADVANCED MATERIALS (2010)
Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors
Horng-Chih Lin et al.
JOURNAL OF APPLIED PHYSICS (2009)
Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact
Jong Kyu Kim et al.
ADVANCED MATERIALS (2008)
A review on the reliability of GaN-based LEDs
Matteo Meneghini et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2008)
Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy
ZQ Fang et al.
APPLIED PHYSICS LETTERS (2005)
High voltage GaN Schottky rectifiers
GT Dang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)