Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5091033
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Funding
- Murata Manufacturing Co., Ltd.
- JSPS KAKENHI from JSPS [25220604, 17J03125]
- Spintronics Research Network of Japan
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We have demonstrated that the strain direction can be detected sensitively using an exchange-biased spin valve (SV) formed on a flexible substrate. The flexible giant magnetoresistive SV used here contains a strain-sensitive Co free layer and a strain-insensitive exchange-biased NiFe pinned layer. The exchange bias is imparted from an antiferromagnetic FeMn layer stacked on the NiFe layer. When the strain is applied in a direction deviating from the exchange bias field, the free layer magnetization rotates along this directly only, resulting in a resistance change. Compared to the previously reported flexible pseudo SV, the present device allows strain direction sensing at a much smaller strain magnitude because no external magnetic field assistance is needed to fix the pinned layer magnetization, which hampers the rotation of the free layer magnetization. The robustness of the exchange bias to the strain in the simple NiFe/FeMn bilayer structure is also discussed. Published under license by AIP Publishing.
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