Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5085012
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Funding
- National Key Research and Development Program of China [2018YFB0406702]
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This letter reports an approach for growing semipolar (11-22) GaN films with significantly reduced defect densities on m-plane sapphire substrates by incorporating a sequence of two in situ SiNx layers. The first SiNx layer is deposited on an initial epitaxial GaN layer and acts as a nanomask for preventing the propagation of extended defects. The second SiNx layer is deposited just after subsequent epitaxial GaN over-growth begins to form self-organized GaN islands, which encourages further GaN growth to initiate from the exposed island sidewalls while blocking the penetration of the remaining defects. X-ray rocking curve measurements show that our semipolar GaN films provide relatively low full width at half maximum values at 0.119 degrees along both the [11-23] and [10-10] directions. Additionally, transmission electron microscopy analyses confirm that our semipolar GaN films provide a significantly reduced density of threading dislocations down to similar to 6 x 10(8) cm(-2), which is two orders of magnitude less than those of conventionally deposited films.
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