Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (beta-Ga2O3) and p-GaN. The detailed mechanical exfoliation process was developed and can be used for further device applications. The atomic force microscopy study showed that the exfoliated beta-Ga2O3 flakes had a very smooth surface with a roughness of 0.65 nm. Transmission electron microscopy revealed a clearly defined interface between the exfoliated beta-Ga2O3 and p-GaN. The p-n heterojunction exhibited a turn-on voltage of 3.6V and a rectification ratio of similar to 10(5). The heterojunction also showed good thermal performance up to 200 degrees C. Ideality factors and turn-on voltages decrease with temperature, tending toward the ideal threshold voltage of 3.2V as determined by Silvaco simulations. This work provides valuable information on a mechanically exfoliated beta-(Ga2O3GaN)-Ga-/ p-n heterojunction, which opens up the opportunities for a variety of photonic and electronic applications. Published under license by AIP Publishing.