Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab1713
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Funding
- DARPA/MTO [N66001-08-1-204]
- Scientific User Facilities Division of the Office of Basic Energy Sciences, U.S. Department of Energy [DE-AC02-05CH11231]
- Ministry of Science and ICT (MSIT) of the Korean government [NRF-2017R1C1B2011750]
- Peking University [NRF-2018K2A9A2A06021584]
- NRF-MSIT of the Korean government [NRF-2019R1A2C3003129, CAMM-2019M3A6B3030637, NRF-2018M3D1A1058998, NRF-2015R1A5A1037668]
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Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire growth. This localization of the laser-driven growth can realize on-demand and site-selective direct synthesis of length-controlled nanowires on catalytic gold nanodots. The length of the InN nanowires is controlled by the laser irradiation time at a fixed power. Energy dispersive X-ray, Raman and photoluminescence spectroscopic analyzes respectively characterize the elemental composition, crystallinity, and emission properties of as-grown InN nanowires. (c) 2019 The Japan Society of Applied Physics
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