4.8 Article

A Ferrite Synaptic Transistor with Topotactic Transformation

Journal

ADVANCED MATERIALS
Volume 31, Issue 19, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201900379

Keywords

artificial synapses; complex oxides; electrolyte gating; synaptic transistors; topotactic transformations

Funding

  1. National Key R&D Program of China [2017YFA0303604]
  2. National Natural Science Foundation of China [11674385, 11404380, 11721404, 11874412, 11574219]
  3. Youth Innovation Promotion Association of CAS [2018008]
  4. Key Research Program of Frontier Sciences CAS [QYZDJSSW-SLH020]

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Hardware implementation of artificial synaptic devices that emulate the functions of biological synapses is inspired by the biological neuromorphic system and has drawn considerable interest. Here, a three-terminal ferrite synaptic device based on a topotactic phase transition between crystalline phases is presented. The electrolyte-gating-controlled topotactic phase transformation between brownmillerite SrFeO2.5 and perovskite SrFeO3-delta is confirmed from the examination of the crystal and electronic structure. A synaptic transistor with electrolyte-gated ferrite films by harnessing gate-controllable multilevel conduction states, which originate from many distinct oxygen-deficient perovskite structures of SrFeOx induced by topotactic phase transformation, is successfully constructed. This three-terminal artificial synapse can mimic important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. Simulations of a neural network consisting of ferrite synaptic transistors indicate that the system offers high classification accuracy. These results provide insight into the potential application of advanced topotactic phase transformation materials for designing artificial synapses with high performance.

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