Related references
Note: Only part of the references are listed.Complete-series excitonic dipole emissions in few layer ReS2 and ReSe2 observed by polarized photoluminescence spectroscopy
Ching-Hwa Ho et al.
NANO ENERGY (2019)
Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment
Seo-Hyeon Jo et al.
ADVANCED SCIENCE (2018)
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
Nihar R. Pradhan et al.
SCIENTIFIC REPORTS (2018)
High-performance, multifunctional devices based on asymmetric van der Waals heterostructures
Ruiqing Cheng et al.
NATURE ELECTRONICS (2018)
Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer
Fangfang Cui et al.
NANO RESEARCH (2017)
Direct and indirect light emissions from layered ReS2-xSex (0 ≤ x ≤ 2)
Ching-Hwa Ho et al.
NANOTECHNOLOGY (2017)
2D materials for silicon photonics
Yanhao Tang et al.
NATURE NANOTECHNOLOGY (2017)
Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x)Se2x Alloys with Distorted 1T Structure
Wen Wen et al.
SMALL (2017)
Doping two-dimensional materials: ultra-sensitive sensors, band gap tuning and ferromagnetic monolayers
Simin Feng et al.
NANOSCALE HORIZONS (2017)
Multilayer Graphene-WSe2 Heterostructures for WSe2 Transistors
Hao-Ling Tang et al.
ACS NANO (2017)
Low Variability in Synthetic Monolayer MoS2 Devices
Kirby K. H. Smithe et al.
ACS NANO (2017)
Suppression of intrinsic roughness in encapsulated graphene
Joachim Dahl Thomsen et al.
PHYSICAL REVIEW B (2017)
Ambipolar transport based on CVD-synthesized ReSe2
Byunggil Kang et al.
2D MATERIALS (2017)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim et al.
ACS NANO (2017)
Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets
Enze Zhang et al.
ACS NANO (2016)
Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials
Marcos H. D. Guimaraes et al.
ACS NANO (2016)
Non-Lithographic Fabrication of All-2D α-MoTe2 Dual Gate Transistors
Kyunghee Choi et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Chemical Vapor Deposition Synthesis of Ultrathin Hexagonal ReSe2 Flakes for Anisotropic Raman Property and Optoelectronic Application
Muhammad Hafeez et al.
ADVANCED MATERIALS (2016)
Parallel Stitching of 2D Materials
Xi Ling et al.
ADVANCED MATERIALS (2016)
Improved contact resistance in ReSe2 thin film field-effect transistors
Chris M. Corbet et al.
APPLIED PHYSICS LETTERS (2016)
Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals
Bhakti Jariwala et al.
CHEMISTRY OF MATERIALS (2016)
The Role of the Fermi Level Pinning in Gate Tunable Graphene-Semiconductor Junctions
Ferney A. Chaves et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Heterostructures based on two-dimensional layered materials and their potential applications
Ming-Yang Li et al.
MATERIALS TODAY (2016)
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
Hsun-Jen Chuang et al.
NANO LETTERS (2016)
Large-scale chemical assembly of atomically thin transistors and circuits
Mervin Zhao et al.
NATURE NANOTECHNOLOGY (2016)
2D materials and van der Waals heterostructures
K. S. Novoselov et al.
SCIENCE (2016)
Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset SnS2/MoS2 Vertical Bilayer Heterostructures with High Lattice Mismatch
Bo Li et al.
Advanced Electronic Materials (2016)
Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors
Shu Nakaharai et al.
ACS NANO (2015)
Semiconductor-Insulator-Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
Hyun Jeong et al.
ACS NANO (2015)
Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors
Yen-Fu Lin et al.
ADVANCED MATERIALS (2015)
Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry
Yanqing Feng et al.
PHYSICAL REVIEW B (2015)
Noncovalent Molecular Doping of Two-Dimensional Materials
Bo Cai et al.
CHEMNANOMAT (2015)
Ambipolar Phosphorene Field Effect Transistor
Saptarshi Das et al.
ACS NANO (2014)
Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor
Daniel Wolverson et al.
ACS NANO (2014)
Field-Effect Transistors Built from All Two-Dimensional Material Components
Tania Roy et al.
ACS NANO (2014)
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
Yen-Fu Lin et al.
ADVANCED MATERIALS (2014)
The Unusual Mechanism of Partial Fermi Level Pinning at Metal-MoS2 Interfaces
Cheng Gong et al.
NANO LETTERS (2014)
What Does Annealing Do to Metal-Graphene Contacts?
Wei Sun Leong et al.
NANO LETTERS (2014)
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Lingming Yang et al.
NANO LETTERS (2014)
Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors
Shengxue Yang et al.
NANOSCALE (2014)
HETEROJUNCTIONS IN 2D SEMICONDUCTORS A perfect match
Georg S. Duesberg
NATURE MATERIALS (2014)
Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
He Tian et al.
SCIENTIFIC REPORTS (2014)
Controllable Schottky Barriers between MoS2 and Permalloy
Weiyi Wang et al.
SCIENTIFIC REPORTS (2014)
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
Andres Castellanos-Gomez et al.
2D MATERIALS (2014)
Liquid-Phase Syntheses and Material Properties of Two-Dimensional Nanocrystals of Rare Earth-Selenium Compound Containing Planar Se Layers: RESe2 Nanosheets and RE4O4Se3 Nanoplates
Jun Gu et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2013)
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
Song-Lin Li et al.
NANO LETTERS (2013)
Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
Shinichiro Mouri et al.
NANO LETTERS (2013)
Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
Hui Fang et al.
NANO LETTERS (2013)
Graphene Transistors: Status, Prospects, and Problems
Frank Schwierz
PROCEEDINGS OF THE IEEE (2013)
Graphene thickness-graded transistors with reduced electronic noise
Guanxiong Liu et al.
APPLIED PHYSICS LETTERS (2012)
Tuneable electronic properties in graphene
M. F. Craciun et al.
NANO TODAY (2011)
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
Changgu Lee et al.
ACS NANO (2010)
Low contact resistivity and strain in suspended multilayer graphene
Francisco P. Rouxinol et al.
APPLIED PHYSICS LETTERS (2010)
Boron nitride substrates for high-quality graphene electronics
C. R. Dean et al.
NATURE NANOTECHNOLOGY (2010)
Current saturation in zero-bandgap, topgated graphene field-effect transistors
Inanc Meric et al.
NATURE NANOTECHNOLOGY (2008)
Measurement of scattering rate and minimum conductivity in graphene
Y. -W. Tan et al.
PHYSICAL REVIEW LETTERS (2007)
Electronic confinement and coherence in patterned epitaxial graphene
Claire Berger et al.
SCIENCE (2006)
Two-dimensional gas of massless Dirac fermions in graphene
KS Novoselov et al.
NATURE (2005)
Optical property of the near band-edge transitions in rhenium disulfide and diselenide
CH Ho et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2004)
Electric field effect in atomically thin carbon films
KS Novoselov et al.
SCIENCE (2004)