Journal
ADVANCED FUNCTIONAL MATERIALS
Volume 29, Issue 22, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201809011
Keywords
2D materials; ambipolar electronics; logic circuit; ReSe2; Schottky barriers
Categories
Funding
- Taiwan Ministry of Science and Technology [MOST 107-2119-M-005-006, 105-2112-M-005-002-MY3]
- Elemental Strategy Initiative
- CREST, JST [JPMJCR15F3]
Ask authors/readers for more resources
Complementary circuits based on 2D materials show great promise for next-generation electronics. An ambipolar all-2D ReSe2 field-effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence and noise measurements. Ambipolar transfer characteristics are achieved owing to the tunable Fermi level of the graphene contact and negligible and 30 meV Schottky barrier heights for the n- and p-channel regimes, respectively. An inverter is also fabricated to demonstrate ambipolar ReSe2 FET operation in a logic circuit. Furthermore, a p/n switchable unipolar FET is designed and shows potential for building complimentary circuits from a signal device. This work demonstrates the potential of all-2D ReSe2 FETs and makes available new approaches for designing next-generation devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available