Journal
ACS NANO
Volume 13, Issue 6, Pages 6356-6362Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b01754
Keywords
ultrathin c-Si; asymmetric heterocontacts; passivating contact; titanium oxide; electron-selective contact
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Funding
- Australian Renewable Energy Agency (ARENA) Research and Development Program [2017/RND007]
- National Natural Science Foundation of China [61874177, 61674154]
- Zhejiang Provincial Natural Science Foundation [LR19E020001]
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In order to achieve a high performance-to-cost ratio to photovoltaic devices, the development of crystalline silicon (c-Si) solar cells with thinner substrates and simpler fabrication routes is an important step. Thin-film heterojunction solar cells (HSCs) with dopant-free and carrier-selective configurations look like ideal candidates in this respect. Here, we investigated the application of n-type silicon/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HSCs on periodic nanopyramid textured, ultrathin c-Si (similar to 25 mu m) substrates. A fluorine-doped titanium oxide film was used as an electron-selective passivating layer showing excellent interfacial passivation (surface recombination velocity similar to 10 cm/s) and contact property (contact resistivity similar to 20 m Omega/cm(2)). A high efficiency of 15.10% was finally realized by optimizing the interfacial recombination and series resistance at both the front and rear sides, showing a promising strategy to fabricate high-performance ultrathin c-Si HSCs with a simple and low-temperature procedure.
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