Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 19, Pages 17647-17653Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b02493
Keywords
vdW heterojunction; magnetic tunnel junction; tunneling magnetoresistance; spin Hall effect; ab initio calculation
Funding
- National Natural Science Foundation of China [61627813, 61571023]
- International Collaboration Project [B16001]
- National Key Technology Program of China [2017ZX01032101]
- Academic Excellence Foundation of BUAA
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Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2 heterojunction, where the VSe2 monolayer acts as a ferromagnet with room-temperature ferromagnetism. We propose the concept of spin orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS2, SOT is promising for the magnetization switching of VSe2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe2/MoS2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.
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