4.4 Article

Bismuth telluride topological insulator nanosheet saturable absorbers for q-switched mode-locked Tm:ZBLAN waveguide lasers

Journal

ANNALEN DER PHYSIK
Volume 528, Issue 7-8, Pages 543-550

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/andp.201600014

Keywords

topological insulator; Bi2Te3; femtosecond laser direct-write; Tm:ZBLAN waveguide laser; Q-switched mode-locking

Funding

  1. Australian Research Council Centres of Excellence scheme [CE110001018]
  2. National Natural Science Fund of China [61435010]
  3. Macquarie University
  4. iMQRES scholarship

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Nanosheets of bismuth telluride (Bi2Te3), a topological insulator material that exhibits broadband saturable absorption due to its non-trivial Dirac-cone like energy structure, are utilized to generate short pulses from Tm:ZBLAN waveguide lasers. By depositing multiple layers of a carefully prepared Bi2Te3 solution onto a glass substrate, the modulation depth and the saturation intensity of the fabricated devices can be controlled and optimized. This approach enables the realization of saturable absorbers that feature a modulation depth of 13% and a saturation intensity of 997 kW/cm(2). For the first time to our knowledge, Q-switched mode-locked operation of a linearly polarized mid-IR ZBLAN waveguide chip laser was realized in an extended cavity configuration using the topological insulator Bi2Te3. The maximum average output power of the laser is 16.3 mW and the Q-switched and mode-locked repetition rates are 44 kHz and 436 MHz, respectively.

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