Journal
APPLIED NANOSCIENCE
Volume 9, Issue 7, Pages -Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s13204-019-00983-w
Keywords
Semiconductor; X-ray diffraction; Vibrational spectroscopy; SEM; EDX; Optical properties; Electrical properties
Categories
Funding
- Deanship of Scientific Research at King Khalid University [R.G.P. 1/37/40]
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Lead iodide is one of the best room temperature radiation detector including applications in solar cell and photodetectors. Herein, we have fabricated the high-quality thin films of pure and Nd:PbI2 through a simple and cost-effective spin-coating route and investigated their key properties. X-ray diffraction study confirms the growth orientation of all films along c-axis/(001) plane and single phase of 2H-PbI2 Polytypes with the crystallites of size in range of 21-31 nm. Further confirmation of growth and phase was carried out through FT-Raman analysis. EDX and SEM mapping was also carried out to confirm the Nd doping and its homogeneity in the films. SEM provides a clear view on the surface morphology of grown films and grain size was found in the range of 54-71 nm. Optical measurement shows high transparency, i.e., similar to 90% for grown films in visible to NIR region. The direct bandgap is observed to be enhanced with Nd doping from 2.45 to 2.58 eV; however, there is another bandgap which shows reduction with doping from 2.30 to 2.24 eV. This shows the possibility of existence of sub-energy bandgap in PbI2. The stable value of refractive index is evaluated similar to 2. The value of epsilon MODIFIER LETTER PRIME is found to varies from 4 to 27 in the energy range of 1-2.5 eV. Optical limiting behavior of all films was also studied at two lasers of lambda = 532 nm and 632.8 nm. Moreover, a device fabrication was done for electrical study and found the resistivity increases from 5.14 x 10(8) ohm-cm for pure to 1.18 x 10(9) ohm-cm for 5% Nd-doped PbI2.
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