Journal
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
Volume 7, Issue 1, Pages 353-365Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2018.2877968
Keywords
Common-source inductors; crosstalk; driver; gate-drain capacitor; package; silicon carbide (SiC) MOSFET
Categories
Funding
- National Natural Science Foundation of China [51877007]
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Because of higher switching speed of silicon carbide MOSFET, the crosstalk in a phase-leg configuration will be more serious, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment. The displacement current of the gate-drain capacitor and the voltage drop on the common-source inductors can induce the crosstalk. In order to suppress the crosstalk, this paper proposes a novel gate driver, in which two additional capacitors are added to create the low turn-off gate impedance. With this proposed driver, the common-source parasitic inductor can be decoupled from the gate loop and the displacement current of the gate-drain capacitor can be bypassed. In addition, the operating principle and the parameters design are also analyzed. Finally, the crosstalk in the non-Kelvin package and the Kelvin package are tested by experiments, the validity of the analysis and the effectiveness for suppression the crosstalk are proved as well.
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