Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film

We report on a high performance Pt/n(-) Ga2O3/n(+)Ga(2)O(3) solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using similar to 30 angstrom thick semi-transparent Pt that has up to 90% transparency to UV radiation with wavelengths < 260 nm. The fabricated photodiode exhibited Schottky characteristics with a turn-on voltage of similar to 1 V and a rectification ratio of similar to 10(8) at +/- 2 V and showed deep UV solar blind detection at 0 V. The Schottky photodiode exhibited good device characteristics such as an ideality factor of 1.23 and a breakdown voltage of similar to 110 V. The spectral response showed a maximum absolute responsivity of 0.16 A/W at 222 nm at zero bias corresponding to an external quantum efficiency of similar to 87.5%. The cutoff wavelength and the out of band rejection ratio of the devices were similar to 260 nm and similar to 10(4), respectively, showing a true solar blind operation with an excellent selectivity. The time response is in the millisecond range and has no long-time decay component which is common in photoconductive wide bandgap devices. (c) 2019 Author(s).