Journal
APL MATERIALS
Volume 7, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5064471
Keywords
-
Funding
- AFOSR [FA9550-17-P-0029, N00014-16-P-2058, FA9550-18-1-0059, FA9550-18-1-0479]
- ONR [FA9550-17-P-0029, N00014-16-P-2058]
- state of MN DEED Program [IVPP-17-0002]
- ARO [W911NF-17-S-0002]
Ask authors/readers for more resources
We report on a high performance Pt/n(-) Ga2O3/n(+)Ga(2)O(3) solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active area of the photodiode was fabricated using similar to 30 angstrom thick semi-transparent Pt that has up to 90% transparency to UV radiation with wavelengths < 260 nm. The fabricated photodiode exhibited Schottky characteristics with a turn-on voltage of similar to 1 V and a rectification ratio of similar to 10(8) at +/- 2 V and showed deep UV solar blind detection at 0 V. The Schottky photodiode exhibited good device characteristics such as an ideality factor of 1.23 and a breakdown voltage of similar to 110 V. The spectral response showed a maximum absolute responsivity of 0.16 A/W at 222 nm at zero bias corresponding to an external quantum efficiency of similar to 87.5%. The cutoff wavelength and the out of band rejection ratio of the devices were similar to 260 nm and similar to 10(4), respectively, showing a true solar blind operation with an excellent selectivity. The time response is in the millisecond range and has no long-time decay component which is common in photoconductive wide bandgap devices. (c) 2019 Author(s).
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available