Related references
Note: Only part of the references are listed.Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension
Shuang Pi et al.
NATURE NANOTECHNOLOGY (2019)
Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
Alpana Nayak et al.
ADVANCED MATERIALS (2018)
In-memory computing with resistive switching devices
Daniele Ielmini et al.
NATURE ELECTRONICS (2018)
The future of electronics based on memristive systems
Mohammed A. Zidan et al.
NATURE ELECTRONICS (2018)
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors
W. Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2017)
Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability
Chaoxing Wu et al.
NATURE COMMUNICATIONS (2017)
Electrochemical Tantalum Oxide for Resistive Switching Memories
Andrea Zaffora et al.
ADVANCED MATERIALS (2017)
Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity
Rivu Midya et al.
ADVANCED MATERIALS (2017)
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
Anja Wedig et al.
NATURE NANOTECHNOLOGY (2016)
Subquantum conductive-bridge memory
John R. Jameson et al.
APPLIED PHYSICS LETTERS (2016)
Electrochemistry at the Nanoscale
Ilia Valov et al.
NANOSCALE (2016)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Haitao Sun et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
Stefan Tappertzhofen et al.
ACS NANO (2013)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Thermal-stability optimization of Al2O3/Cu-Te based conductive-bridging random access memory systems
L. Goux et al.
THIN SOLID FILMS (2013)
Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
Tohru Tsuruoka et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
Tsuyoshi Hasegawa et al.
ADVANCED MATERIALS (2012)
Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
Stefan Tappertzhofen et al.
NANOSCALE (2012)
Redox processes in silicon dioxide thin films using copper microelectrodes
S. Tappertzhofen et al.
APPLIED PHYSICS LETTERS (2011)
A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
Li-Wei Feng et al.
APPLIED PHYSICS LETTERS (2010)
Electrode kinetics of Cu-SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
C. Schindler et al.
APPLIED PHYSICS LETTERS (2009)