Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics

With the advent of artificial intelligence and the Internet of Things, demand has grown for flexible, low-power, high-density nonvolatile memory capable of handling vast amounts of information. Ultrathin-layered 2D semiconductor materials such as molybdenum disulfide (MoS2) have considerable potential for flexible electronic device applications because of their unique physical properties. However, development of flexible MoS2-based flash memory is challenging, as there is a lack of flexible dielectric materials with sufficient insulating properties for use in flash memory devices with dielectric bilayers. Here, large-scale, low-power nonvolatile memory is realized based on a chemical vapor deposition (CVD)-grown millimeter-scale few-layer MoS2 semiconductor channel and polymer dielectrics prepared via an initiated CVD (iCVD) process. Using the outstanding insulating properties and solvent-free nature of iCVD, fabricated memory devices with a tunable memory window, a high on/off ratio (approximate to 10(6)), low operating voltages (approximate to 13 V), stable retention times exceeding 10(5) s with a possible extrapolated duration of years, and cycling endurance exceeding 1500 cycles are demonstrated. Owing to these characteristics, these devices distinctly outperform previously reported MoS2-based memory devices. Leveraging the inherent mechanical flexibility of both ultrathin polymer dielectrics and MoS2, this work is a step toward realization of large-scale, low-power, flexible MoS2-based flash memory.