4.6 Article

Large-area synthesis of 2D MoO3-x for enhanced optoelectronic applications

Journal

2D MATERIALS
Volume 6, Issue 3, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/ab1114

Keywords

molybdenum oxide; 2D semiconductors; UV sensing; large area synthesis; vapor deposition

Funding

  1. Australian Research Council (ARC) [DE150100909, DE160100023, LE110100223, LE150100001]
  2. Australian Postgraduate Award (APA) scheme of the Australian government
  3. Australian Research Council [DE150100909] Funding Source: Australian Research Council

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Two-dimensional (2D) molybdenum trioxide has been attracting research interest due to its bandgap tunability and a wide variety of desirable electronic/optoelectronic properties. However, the lack of a reproducible synthesis process for obtaining large coverage 2D MoO3 has limited the use of this material. Here we report the synthesis of large area 2D MoO3-x via physical vapor deposition, using MoO3 powder as the precursor. The as-grown layers are directly deposited on SiO2/Si, eliminating the necessity for any transfer process. These as-grown MoO3-x layers allow for the large-scale fabrication of planar device arrays. The applicability of 2D MoO3-x in optoelectronics is established via the demonstration of low-power ultraviolet (UV) sensor arrays, with rapid response times (200 mu s) and responsivity up to 54.4 A . W-1. At a bias voltage of 0.1 V, they are at least 400 times more power efficient than their next best contender.

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