4.6 Article

Experimental Demonstration of Ultrafast THz Modulation in a Graphene-Based Thin Film Absorber through Negative Photoinduced Conductivity

Journal

ACS PHOTONICS
Volume 6, Issue 3, Pages 720-727

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.8b01595

Keywords

THz graphene; hot carrier generation; ultrafast THz tunable grapheme metasurface; grapheme photoexcitation; experimental grapheme absorber; flat optics modulation

Funding

  1. European Union [696656, 736876]
  2. European Research Council under ERC Advanced Grant [320081]
  3. Hellenic Foundation for Research and Innovation (HFRI)
  4. General Secretariat for Research and Technology (GSRT), under the HFRI PhD Fellowship [4894]
  5. National Priorities Research Program from the Qatar National Research Fund (member of The Qatar Foundation) [NPRP9-329-1-067]
  6. H2020 Laserlab-Europe [EC-GA 654148]
  7. H2020 MIR-BOSE [EC-GA 737017]
  8. Tomsk State University Competitive Programme
  9. H2020-MSCA-RISE-2014 Project [644076]

Ask authors/readers for more resources

We present an experimental demonstration and interpretation of an ultrafast optically tunable, graphene-based thin film absorption modulator for operation in the THz regime. The graphene-based component consists of a uniform CVD-grown graphene sheet stacked on an SU-8 dielectric substrate that is grounded by a metallic ground plate. The structure shows enhanced absorption originating from constructive interference of the impinging and reflected waves at the absorbing graphene sheet. The modulation of this absorption, which is demonstrated via a THz time-domain spectroscopy setup, is achieved by applying an optical pump signal, which modifies the conductivity of the graphene sheet. We report an ultrafast (on the order of few ps) absorption modulation on the order of 40% upon photoexcitation. Our results provide evidence that the optical pump excitation results in the degradation of the graphene THz conductivity, which is connected with the generation of hot carriers, the increase of the electronic temperature, and the dominant increase of the scattering rate over the carrier concentration as found in highly doped samples.

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