Journal
NANO ENERGY
Volume 56, Issue -, Pages 322-329Publisher
ELSEVIER
DOI: 10.1016/j.nanoen.2018.10.042
Keywords
AZO/NiO/AZO/muscovite; Aluminum doped zinc oxide (AZO); Van der Waals; Transparent flexible memristor
Categories
Funding
- Ministry of Science and Technology [MOST 106-2119-M-009-011-MY3, 106-2628-E-009-001-MY2, 106-2923-M-009-003-MY2, 105-2633-M-007-003, 106-2112-M-007-028-MY3, 107-2923-E-007-002-MY3, 107-2112-M-007-030-MY3, 06-2923-E-007-006-MY2, 105-2119-M-009-009, 107-3017-F-007-002]
- Center for Emergent Functional Matter Science of National Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan
- Ministry of Science and Technology (MOST) in Taiwan [MOST-107-3017-F-009-002]
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Tai
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Multifunctional electronics featuring optical transparency, portability, mechanical flexibility, light-weight and environment-friendly are of great demands for next-generation smart electronics. Memristor represents one of the important chains in next-generation devices as the information computing and storage component. Here, we design the transparent flexible structure based on van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) for a memristor application. The (ANA/muscovite) memristor satisfies all the hardest requirements of a transparent soft device such as optical transparency over 80% in visible light and high performance with a ON/OFF resistance ratio > 10(5), stable endurance to 10(3) cycles and long retention time of 10(5) s. In addition, the ANA/muscovite memristor can work at various bending radii down to 5 mm, a mechanical bending after 1000 cycles at a curvature with a radius of 6.5 mm and a high temperature up to 185 degrees C, which deliver a pathway for future applications in flexible transparent smart electronics.
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