Journal
ADVANCED OPTICAL MATERIALS
Volume 7, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201900020
Keywords
black phosphorus; indium selenide; photoconductive detector; vertical structure
Categories
Funding
- National Natural Science Foundation of China [61605131, 61705136, 61435010, 61875138]
- Natural Science Foundation of Guangdong Province for Distinguished Young Scholars [2018B030306038]
- Educational Commission of Guangdong Province [2016KCXTD006]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20170818093453105, ZDSYS201707271014468]
- Science and Technology Development Fund, Macao SAR, China [007/2017/A1, 132/2017/A3]
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2D materials offer tremendous opportunities for designing and investigating multifunctional high-performance electronic and optoelectronic devices. In this contribution, a photogate vertical structure is devised by vertically stacking layered indium selenide (InSe) on top of layered black phosphorous (BP). The photodetector built with the vertical structure possesses a wide response range from 405 to 1550 nm, and the photodetector exhibits a relatively fast (approximate to 22 ms) response and high responsivity of approximate to 53.80 A W-1 at lambda = 655 nm and 43.11 A W-1 at lambda = 1550 nm, respectively. Under visible-light illumination (lambda = 655 nm), the external quantum efficiency of the device can reach 1020%. By taking advantage of gate-tunable modulation, the forward-to-reverse bias current ratio is as high as 10(3). In addition, the environmental degradation of BP could be effectively suppressed by InSe capping. The high sensitivity, broad spectral response, and enhanced stability of the photodetector show that the photogate structure provides a new opportunity for broad spectral detection or imaging at room temperature by using 2D materials with a vertical structure.
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