Journal
AIP ADVANCES
Volume 9, Issue 2, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.5082862
Keywords
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Funding
- National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2017R1D1A1B03032375]
- MOTIE (Ministry of Trade, Industry Energy) [10051403]
- KDRC (Korea Display Research Corporation)
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In-Ga-Zn-O (IGZO) films deposited by sputtering process generally require thermal annealing above 300 degrees C to achieve satisfactory semiconductor properties. In this work, microwave and e-beam radiation are adopted at room temperature as alternative activation methods. Thin film transistors (TFTs) based on IGZO semiconductors that have been subjected to microwave and e-beam processes exhibit electrical properties similar to those of thermally annealed devices. However spectroscopic ellipsometry analyses indicate that e-beam radiation may have caused structural damage in IGZO, thus compromising the device stability under bias stress. (c) 2019 Author(s).
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