4.7 Article

Sensitive Molybdenum Disulfide Based Field Effect Transistor Sensor for Real-time Monitoring of Hydrogen Peroxide

Journal

SCIENTIFIC REPORTS
Volume 9, Issue -, Pages -

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-36752-y

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Funding

  1. National Natural Science Foundation of China [21475034, 21505037, 21675041]

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A reliable and highly sensitive hydrogen peroxide (H2O2) field effect transistor (FET) sensor is reported, which was constructed by using molybdenum disulfide (MoS2)/reduced graphene oxide (RGO). In this work, we prepared MoS2 nanosheets by a simple liquid ultrasonication exfoliation method. After the RGO-based FET device was fabricated, MoS2 was assembled onto the RGO surface for constructing MoS2/RGO FET sensor. The as-prepared FET sensor showed an ultrahigh sensitivity and fast response toward H2O2 in a real-time monitoring manner with a limit of detection down to 1 pM. In addition, the constructed sensor also exhibited a high specificity toward H2O2 in complex biological matrix. More importantly, this novel biosensor was capable of monitoring of H2O2 released from HeLa cells in realtime. So far, this is the first report of MoS2/RGO based FET sensor for electrical detection of signal molecules directly from cancer cells. Hence it is promising as a new platform for the clinical diagnosis of H2O2-related diseases.

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