Journal
OPTICAL MATERIALS EXPRESS
Volume 9, Issue 4, Pages 1738-1748Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.9.001738
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Funding
- Villum Fonden via the NATEC Centre [8692]
- YIP QUEENs [VKR023442]
- Ministerstwo Nauki i Szkolnictwa Wyzszego [DI 2017 011747]
- Danish National Research Foundation [DNRF103]
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We report on the synthesis and systematic investigation of quantum dot based optical gain material potentially suitable for applications in active devices operating around a wavelength of 1.55 mu m and above. The quantum dots were selectively grown in a process assisted by block-copolymer lithography. We applied a new type of diblock copolymer, PS-b-PDMS (polystyrene-block-polydimethylsiloxane), which allows for the direct fabrication of a silicon oxycarbide hard mask used for lithography. Arrays of InAs/InP quantum dots were selectively grown via droplet epitaxy. Our detailed optical investigations of the quantum dot carrier dynamics in the 10-300 K temperature range indicate the presence of a significant density of defect states located within the InP bandgap and in the vicinity of the quantum dots. Those defects have a substantial impact on the optical properties of the quantum dots. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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