Journal
NATURE COMMUNICATIONS
Volume 10, Issue -, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41467-019-08764-3
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Funding
- Deutsche Forschungsgemeinschaft (DFG) via excellence cluster Nanosystems Initiative Munich
- Deutsche Forschungsgemeinschaft (DFG) via excellence cluster e-conversion
- DFG [WU 637/4-1, HO 3324/9-1]
- European Research Council (ERC) under the ERC [336749, 772195]
- Volkswagen Foundation
- Center for NanoScience (CeNS)
- LMUinnovativ
- European Research Council (ERC) [336749, 772195] Funding Source: European Research Council (ERC)
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Charge carriers in semiconducting transition metal dichalcogenides possess a valley degree of freedom that allows for optoelectronic applications based on the momentum of excitons. At elevated temperatures, scattering by phonons limits valley polarization, making a detailed knowledge about strength and nature of the interaction of excitons with phonons essential. In this work, we directly access exciton-phonon coupling in charge tunable single layer MoS2 devices by polarization resolved Raman spectroscopy. We observe a strong defect mediated coupling between the long-range oscillating electric field induced by the longitudinal optical phonon in the dipolar medium and the exciton. This so-called Frohlich exciton phonon interaction is suppressed by doping. The suppression correlates with a distinct increase of the degree of valley polarization up to 20% even at elevated temperatures of 220 K. Our result demonstrates a promising strategy to increase the degree of valley polarization towards room temperature valleytronic applications.
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