Journal
NATURE COMMUNICATIONS
Volume 10, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41467-019-08813-x
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Funding
- AFOSR FATE MURI [FA9550-15-1-0514]
- NSF [DMR/ECCS-1509197]
- Center for Energy Efficient Electronics Science (NSF) [0939514]
- King Abdullah University of Science and Technology [OSR-2015-CRG4-2634]
- U.S. Army Research Office through the MIT Institute for Soldier Nanotechnologies [023674]
- Korea Research Institute of Chemical Technology (KRICT) [KK1801-G01]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2017R1C1B2007153]
- US Department of Defense, Office of Naval Research [N00014-16-1-233]
- National Science Foundation [ACI-1053575]
- MIT Engaging Cluster
- Singapore's A* STAR Computational Resource Centre
- Singapore's National Supercomputing Centre
- National Research Council of Science & Technology (NST), Republic of Korea [KK1801-G01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with similar to 1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm(2) V-1 s(-1); electron mobility = 7438 cm(2) V-1 s(-1)), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.
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