Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 55, Issue 21, Pages 6197-6201Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.201600414
Keywords
chemical doping; flexible OLEDs; graphene; transparent electrodes
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Funding
- National Research Foundation of Korea (NRF) - Korea government (MSIP) [NRF-2013R1A2A2A01068753]
- Ministry of Science, ICT and Future Planning (MSIP), Korea, under the IT Consilience Creative Program [IITP-2015-R0346-151007]
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We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70% decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1), 80.7 lm W-1) than those with conventional ITO (84.8 cd A(-1), 73.8 lm W-1).
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