Stepped morphology on vicinal 3C-and 4H-SiC (0001) faces: A kinetic Monte Carlo study

Stepped morphologies on vicinal 3C- and 4H-SiC (0001) surfaces with the miscut toward [1 (1) over bar 00] or [11<(2)over bar >0] directions have been studied with a three-dimensional kinetic Monte Carlo model. In the model, a three-dimensional lattice mesh was established based on the crystal lattice of 3C-and 4H-SiC to fix the positions of atoms and interatomic bonding. Periodic boundary conditions were applied in the lateral direction while helicoidal boundary conditions were used in the direction of crystal growth. Events, such as adatoms attachment, detachment and interlayer transport at the step edges, and adatoms adsorption and diffusion on the terraces were considered in the model. Effects of Ehrlich-Schwoebel barriers at downward step edges and incorporation barriers at upwards step edges were also considered. Moreover, the atoms of silicon and carbon were treated as the minimal diffusing species independently to achieve more elaborate information for the behavior of atoms in the crystal surface. The simulation results showed that multiple-height steps were formed on the vicinal 4H-SiC (0001) surfaces, whereas single bilayer-height stepped morphologies were observed on the vicinal 3C-SiC (0001) surfaces. Furthermore, zigzag shaped edges were observed for both of 3C- and 4H-SiC (0001) surfaces with the miscut toward [11 (2) over bar0] direction. At last, the formation mechanism of the stepped morphology was also analyzed.