4.4 Article

Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms

Journal

SOLID STATE COMMUNICATIONS
Volume 289, Issue -, Pages 38-42

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2018.12.004

Keywords

Layered mixed-anion compounds; Flux growth; Topological insulator; Photoemission spectroscopy

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Ce(O,F)Sb(S,Se)(2) single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)(2) crystallizes in a monoclinic space group, P2(1)/m, with lattice parameters of a = 4.121(7) angstrom, b = 4.109(7) angstrom, c = 13.233(15) angstrom, beta = 97.94(7) degrees. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its inplane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.

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