Journal
SOLID STATE COMMUNICATIONS
Volume 288, Issue -, Pages 38-42Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2018.11.005
Keywords
Oxide thin films; Resistive switching; Memristors
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Funding
- Vannevar Bush Faculty Fellowship program - Basic Research Office of the Assistant Secretary of Defense for Research and Engineering
- Office of Naval Research [N00014-15-1-2848]
- Universidad del Valle Resistive Switching in Oxides with Metal-Insulator Transitions for Applications in Random Access Memories [CI 7999]
- FAPA program through Facultad de Ciencias and Vicerrectoria de Investigaciones of Universidad de los Andes, Bogota Colombia
- Center of Excellence on Novel Materials-CENM of Universidad del Valle
- COLCIENCIAS [120471250659, 120424054303]
- Fundacion Areces (Spain)
- US National Science Foundation [ECCS-1709641]
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We studied the voltage-induced resistive switching (RS) in ferroelectric/metal (BiFeO3/Nb:SrTiO3) vertical devices. We found switching with R-ON and R-OFF ratios of Delta R = 1-R-ON/R-OFF = 0.82 at voltages starting at V-SET, (RESET) = +/- 2 V. Upon increasing voltage, Delta R also increases until dielectric breakdown is reached. Interestingly, the V-SET, (RESET) values at which the RS becomes significant, coincides with the coercive voltage of the ferroelectric polarization, as measured by piezoelectric force microscopy in similar BiFeO3 films. This suggests that the driving mechanism of the RS effect in our films is connected to the BiFeO3 ferroelectricity. However, the increase of the RS effect after complete ferroelectric saturation points to an additional mechanism that may be related to vacancy displacements. This is further supported by forming process necessary to induce resistance bi-stability, typical of an RS effect.
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