Journal
SMALL
Volume 15, Issue 7, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201803898
Keywords
hybrid anodic and metal-assisted chemical etching method; silicon carbide (SiC) nanowires; silicon carbide (SiC) wet etching; third-generation semiconductor material
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Funding
- General Research Fund of Hong Kong Research Grants Council [CUHK 14243616]
- National Natural Science Foundation of China [51605100, U1601202]
- Hong Kong Scholar Program [XJ2017050]
- Fund of Guangdong R&D Science and Technology [2017A030313314, 2016A030310347, 2016A030308016]
- Guangzhou General Programs for Science and Technology Development [201707010446]
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Silicon carbide (SiC) is one of the most important third-generation semiconductor materials. However, the chemical robustness of SiC makes it very difficult to process, and only very limited methods are available to fabricate nanostructures on SiC. In this work, a hybrid anodic and metal-assisted chemical etching (MACE) method is proposed to fabricate SiC nanowires based on wet etching approaches at room temperature and under atmospheric pressure. Through investigations of the etching mechanism and optimal etching conditions, it is found that the metal component plays at least two key roles in the process, i.e., acting as a catalyst to produce hole carriers and introducing band bending in SiC to accumulate sufficient holes for etching. Through the combined anodic and MACE process the required electrical bias is greatly lowered (3.5 V for etching SiC and 7.5 V for creating SiC nanowires) while enhancing the etching efficiency. Furthermore, it is demonstrated that by tuning the etching electrical bias and time, various nanostructures can be obtained and the diameters of the obtained pores and nanowires can range from tens to hundreds of nanometers. This facile method may provide a feasible and economical way to fabricate SiC nanowires and nanostructures for broad applications.
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