InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: a review

Long-distance quantum communication and computation is based on the exchange of information via photons as flying qubits. In all foreseen implementations, from quantum relays and networks to remote quantum computing, the photons must be able to propagate over long distances, in silica fibers, with limited absorption and wave packet dispersion. When propagating into silica fibers, photons in the so-called telecom C-band (i.e. wavelength around 1550 nm) will experience the absolute minimum of absorption, together with a limited photon wave packet dispersion. This implies that losses of information will be minimized and additionally, the capability of the photons to quantum interfere (the so-called Hong-Ou-Mandel effect) will be negligibly affected. This motivated the search for efficient non-classical light sources in this wavelength range. In the present review, we discuss the approaches followed to red-shift the emission wavelength from the near-infrared (NIR) to telecom wavelengths. In particular, the use of metamorphic buffers (MMBs) enabled the use of highly developed InAs/GaAs systems, engineering the dots to emit single and entangled photons in the telecom C-band. The main advantage of this approach is set by the choice of the material system: being the same as state-of-the-art structures emitting in the NIR range, it opens the possibility of achieving comparable performances even at telecommunication wavelengths. Here we will discuss the current state-of-the-art in the generation of non-classical photons, comparing the properties and performances of MMB-based results with other competing quantum dot (QD) platforms. We report in particular that very low fine-structure splitting can be observed with conservative values, on average well below 10 mu eV. This allowed for the observation of post-selected entanglement fidelity higher than 0.6. Additionally, on-demand single-photon emission with g((0))(2) = 0.184 +/- 0.002 was observed in addition to a very low emitter density of approximate to 10(7) cm(-2) and a decay time of tau approximate to 1.2 ns comparable to standard InAs QDs emitting in the NIR range. A final highlight on approaches to further improve the current device performances will also be reported.