Journal
PHYSICAL REVIEW LETTERS
Volume 122, Issue 10, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.122.106102
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Funding
- Initiative and Network Fund of the Helmholtz Association within the Helmholtz Young Investigator Group moreSTEM at Forschungszentrum Julich in Germany [VH-NG-1317]
- Hercules fund from the Flemish Government
- University of Antwerp
- Deutsche Forschungsgemeinschaft (Germany) [RO2057/8-3]
- European Research Council under the European Union's Horizon 2020 research and innovation programme [770887]
- Research Foundation Flanders (FWO, Belgium) [G.0368.15N]
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We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures at unit cell resolution as a key for the correlation of optical and structural phenomena in semiconductor optoelectronics. Momentum-resolved aberration-corrected scanning transmission electron microscopy is employed as a new imaging mode that simultaneously provides four-dimensional data in real and reciprocal space. We demonstrate how internal mesoscale and atomic electric fields can be separated in an experiment, which is verified by comprehensive dynamical simulations of multiple electron scattering. A mean difference of 5.3 +/- 1.5 MV/cm is found for the polarization-induced electric fields in AlN and GaN, being in accordance with dedicated simulations and photoluminescence measurements in previous publications.
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