4.5 Review

Functional Non-Volatile Memory Devices: From Fundamentals to Photo-Tunable Properties

Journal

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201800644

Keywords

flash memory; non-volatile memories; photo-tunable properties; resistive random access memory; semiconductor technologies

Funding

  1. Natural Science Foundation of China [61604097]
  2. Science and Technology Innovation Commission of Shenzhen [JCYJ20170818143618288, JCYJ20170302145229928, JCYJ20170302151653768]
  3. Shenzhen Peacock Technological Innovation Project [KQJSCX20170727100433270, KQJSCX20170327150812967]
  4. Guangdong Provincial Department of Science and Technology [2018B030306028]
  5. Department of Education of Guangdong Province [2016KTSCX120]
  6. Natural Science Foundation of SZU

Ask authors/readers for more resources

As one of the five basic components in a modern computer system, memory plays a key role in data storage while the Von Neumann architecture still occupies a principal position in modern digital era. With the rapid development of portable electronic devices, non-volatile memories are of great importance in human's daily life. High-performance memory devices are highly demanded, and novel materials applied to flash memory and resistive random access memory (ReRAM) have been widely investigated. The functionalities of memories can be broadened with the development of semiconductor technologies. As a facile and low-power electromagnetic wave, light can be another modulation medium, which will not bring destructive operation and can enhance the device performance. In this review, the focus is on flash memory and ReRAM based on various functional materials as well as the recent development of photo-tunable memories.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available