Tunable transmittance spectrum in one-dimensional photonic crystals composed of HgBa2Ca2Cu3O8+δ/GaAs with a defective GaAs layer

In this work, the transmittance spectrum of a defective one-dimensional photonic crystal is numerically calculated using the transfer matrix method and two-fluid model. The photonic crystal is embedded in air and composed alternating layers of a superconductor (HgBa2Ca2Cu3 O8+delta) and a semiconductor (GaAs) with GaAs defects. The dependence of hydrostatic pressure on the critical temperature of the superconductor, dielectric function of the semiconductor, angular frequency of the transverse optical phonons, and thickness of the semiconductor layer is determined. By increasing the pressure, the photonic band gap width increases and the defect mode shifts to larger frequencies. When the thickness of the superconductor increases while the pressure and thickness of the semiconductor layers are kept constant, the PBG width also increases but the defect mode shifts to shorter frequencies. Moreover, when considering two GaAs defects, the coupling between the defect modes decreases as the separation of the defects increases.