4.6 Article

Silicon waveguide optical modulator driven by metal-insulator transition of vanadium dioxide cladding layer

Journal

OPTICS EXPRESS
Volume 27, Issue 4, Pages 4147-4156

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.27.004147

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Funding

  1. Japan Society for the Promotion of Science (JSPS) [16K04955, 18H03686]
  2. Grants-in-Aid for Scientific Research [18H03686, 16K04955] Funding Source: KAKEN

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We have fabricated compact optical modulators consisting of a Si waveguide with a VO2 cladding layer. These devices showed a sharp decrease in transmittance at around 60 degrees C, which is attributable to the metal-insulator transition of the VO2 cladding layer. By systematically varying the length of the device, we evaluated the transmission losses per unit length of the device to be 1.27 dB/mu m, when the VO2 cladding layer was in the insulating (ON) state and 4.55 dB/mu m when it was in the metallic (OFF) state. Furthermore, we found that the device showed an additional loss in the OFF state, which is attributable to a structural effect. As a result, an 8-mu m-long device showed a large extinction ratio of more than 33 dB. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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