Journal
OPTICAL MATERIALS
Volume 88, Issue -, Pages 417-423Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optmat.2018.11.054
Keywords
Semiconductor; FT-Raman spectroscopy; Scanning electron microscopy; Photoluminescence; Dielectric properties; Radiation properties
Categories
Funding
- King Abdulaziz City for Science and Technology (KACST) [LGP-37-109]
Ask authors/readers for more resources
Herein, we report the one pot synthesis of pure and Cd2+ (= 0.97 angstrom) doped PbI2 (Pb2+ = 0.133 angstrom) nanostructures by simple chemical route at room temperature. The structural phase confirmation was done by X-ray diffraction and FT-Raman analyses. Using X-ray data various parameters such as lattice constants, crystallinity, crystallite size, lattice strain, dislocation density etc. were determined. The calculated crystallite size using Scherer's rule was found to be in the range of 50-56 nm. The morphology of synthesized product was studied by SEM that confirms the formation of single crystalline nanosheets (NSs) and nanoplates (NPs). PL spectra shows an noticeable enhancement in emission intensity with Cd doping and a blue and green emission band is observed at 470 and 525 nm with more or less shifting, which makes it applicable for blue and green LEDs devices. The enhancement in dielectric constant was observed due to doping. The total ac electrical conductivity of PbI2 was found to be enriched due to doping. The radiation activity in terms of linear absorption coefficient was tested using Americium (Am-214) radioactive sources and found to be enhanced by Cd2+ doping. The prepared nanostructures are found to be highly sensitive to Am-214 59.5 KeV gamma-ray. The simple synthesis route with enhanced properties of Cd2+ doped PbI2 will be key for future electro-optical and radiation detection applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available