Journal
OPTICAL MATERIALS
Volume 88, Issue -, Pages 111-116Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optmat.2018.11.015
Keywords
Sn doped ZnO; Exciton; Thin films; Dc-unbalanced magnetron sputtering; Annealing
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Funding
- Research, Technology and Higher Education (RISTEKDIKTI) of Indonesian Government [532w/11.C01/PL/2018]
- Institut Teknologi Bandung [1275G/I1.C01/PL/2018, 234f/11.C01/PL/2018]
- Singapore Ministry of Educations [MOE2015-T2-2-065, MOE2015-T2-1-099, MOE2015-T2-2-147]
- FRCs [R-144-000-379-114, R-144-000-368-112]
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The effects of Sn doping, deposition temperature, and post-annealing treatment on the excitonic behavior of ZnO:Sn (SZO) thin films deposited by dc-unbalanced magnetron sputtering have been studied. Sn doping induces the decrease of grain size and promotes the formation of oxygen vacancy-related trap states as indicated by A(1) LO mode in Raman spectra and green emission in photoluminescence spectra. Using a critical point analysis of the dielectric functions from spectroscopic ellipsometry data analysis, Sn doping blueshifts the excitonic absorption and decreases the exciton lifetime via screening the electron-hole Coulomb interaction. By varying the deposition temperature from room temperature up to 300 degrees C (SZO-3), there is no change in excitonic absorption. Then, annealing of SZO-3 at 600 degrees C under oxygen environment (SZO-6) strongly improves the excitonic absorption as well as its lifetime. Critical point analysis on SZO-6 sample clearly reveals the excitonic transition at 3.38 eV and exciton-phonon complexes at 3.66 eV. Thus, the result is important to improve the functionality of doped ZnO with strong excitonic absorption for optoelectronic applications.
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