Journal
OPTICAL AND QUANTUM ELECTRONICS
Volume 51, Issue 3, Pages -Publisher
SPRINGER
DOI: 10.1007/s11082-019-1806-z
Keywords
Diffusion-driven charge transport (DDCT); Light-emitting diode (LED); Lateral heterojunction (LHJ); Current spreading; Modulation doping
Funding
- Aalto University
- Academy of Finland
- European Research Council under the Horizon 2020 research and innovation programme [638173]
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Diffusion-driven charge transport (DDCT) in III-V light-emitting diodes (LEDs) can enable unconventional optoelectronic devices and functionality by fundamentally changing device design and the current injection principle. In our recent study, an AlGaAs/GaAs DDCT-LED consisting of an array of lateral heterojunctions was studied for large-area applications at high powers. Here, we investigate the current spreading and recombination uniformity of a modulation doped GaInP/GaAs DDCT-LED. In particular, we analyze how the background doping of the lower GaInP cladding layer (CL) and the GaAs substrate changes the carrier distribution within the active region of the device. Our charge transport simulations based on the drift-diffusion current and continuity equations predict that modulation doping by a p-doped CL provides much higher recombination uniformity at high powers compared to an n-doped CL. Most importantly, improved current spreading is achieved while maintaining excellent device performance.
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