Journal
NANOSCALE RESEARCH LETTERS
Volume 14, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/s11671-019-2885-2
Keywords
Negative differential resistance; Ruthenium; RRAM; Atomic layer deposition
Funding
- National Key Research and Development Program [2017YFB0405602]
- National Natural Science Foundation of China [61421005, 61874006, 61334007, 61834001]
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In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored. Based on the physics understanding of the resistive switching, the measured NDR behavior is believed to be associated with the partially unipolar reset effect, which is due to the recombination between oxygen vacancies and the thermally released oxygen ions from the RuO2 interface layer. The measured electrical characteristics and X-ray photoelectron spectroscopy (XPS) results verified the physical interpretation.
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