Journal
NANOSCALE RESEARCH LETTERS
Volume 14, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/s11671-019-2933-y
Keywords
Atomic layer deposition; Low-temperature process; Flexible electronics; Synaptic plasticity
Funding
- NSFC [61704030, 61522404]
- 02 State Key Project [2017ZX02315005]
- Program of Shanghai Subject Chief Scientist [18XD1402800]
- Support Plans for the Youth Top-Notch Talents of China
- Chen Guang project - Shanghai Municipal Education Commission
- Shanghai Education Development Foundation
Ask authors/readers for more resources
Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available