Journal
NANO LETTERS
Volume 19, Issue 4, Pages 2450-2455Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b05186
Keywords
Topological insulators; topological surface states; weak antilocalization effect; anisotropic magnetoconductance; Hikami-Larkin-Nagaoka expression
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Funding
- Research Grants Council of the Hong Kong SAR [16301418, C6013-16E]
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Quantitative analysis of the weak antilocalization (WAL) effect of topological surface states in topological insulators is of tremendous importance. The major obstacle to achieve accurate results is how to eliminate the contribution of the anisotropic magnetoconductance of bulk states when the Fermi level lies in bulk bands. Here, we demonstrate that we can analyze quantitatively and accurately the WAL effect of topological surface states in topological insulator, BiSbTeSe2 (BSTS), by measuring the anisotropic magnetoconductance. The anomalous conductance peaks induced by the WAL effect of topological surface states of BSTS together with the anisotropic magnetoconductance of bulk states have been observed. By subtracting the anisotropic magnetoconductance of bulk states, we are able to analyze the WAL effect of topological surface states using the Hikami-Larkin-Nagaoka expression. Our findings offer an alternative strategy for the quantitative exploration of the WAL effect of topological surface states in topological insulators.
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