Journal
NANO LETTERS
Volume 19, Issue 4, Pages 2723-2730Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01007
Keywords
Semiconductor; nanowire; wurtzite; zinc blende; transmission electron microscopy; polytypism
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Funding
- Postdoc-Programme of the German Academic Exchange Service
- NanoLund
- Swedish Research Council
- Swedish Foundation for Strategic Research
- Swedish Energy Agency
- Knut and Alice Wallenberg Foundation
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The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication. However, the fundamental understanding of the nature of polytypism in III-V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments. Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP [100]-oriented substrate. We find wurtzite nanowires to grow along <(1) over bar(1) over bar(1) over bar >(B), and zinc blende counterparts along < 111 >(A). Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires.
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