Journal
NANO LETTERS
Volume 19, Issue 3, Pages 1774-1781Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b04799
Keywords
Indium selenide; carrier mobility; electron-phonon interactions; two-dimensional materials; interlayer interaction; dimensional crossover
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Funding
- Leverhulme Trust [RL-2012-001]
- Graphene Flagship (Horizon 2020 Grant) [785219]
- UK Engineering and Physical Sciences Research Council [EP/M020517/1]
- European Unions Horizon 2020 Research and Innovation Programme, under the Marie Sklodowska-Curie Grant [743580]
- PRACE AISBL
- Marie Curie Actions (MSCA) [743580] Funding Source: Marie Curie Actions (MSCA)
- EPSRC [EP/M020517/1] Funding Source: UKRI
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Two-dimensional (2D) semiconductors are at the center of an intense research effort aimed at developing the next generation of flexible, transparent, and energy-efficient electronics. In these applications, the carrier mobility, that is the ability of electrons and holes to move rapidly in response to an external voltage, is a critical design parameter. Here, we show that the interlayer coupling between electronic wave functions in 2D semiconductors can be used to drastically alter carrier mobility and dynamics. We demonstrate this concept by performing state-of-the-art ab initio calculations for InSe, a prototypical 2D semiconductor that is attracting considerable attention, because of its exceptionally high electron mobility. We show that the electron mobility of InSe can be increased from 100 cm(2) V-1 s(-1) to 1000 cm(2) V-1 s(-1) by exploiting the dimensional crossover of the electronic density of states from two dimensions to three dimensions. By generalizing our results to the broader class of layered materials, we discover that dimensionality plays a universal role in the transport properties of 2D semiconductors.
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