Journal
NANO LETTERS
Volume 19, Issue 4, Pages 2456-2463Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b00019
Keywords
HAT-CN; TMD; threshold voltage; organic molecules; charge transfer
Categories
Funding
- NRF (NRL program) [2017R1A2A1A05001278]
- NRF (SRC program) [2017R1A5A1014862]
- NRF (vdWMRC center)
- National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2017R1A6A3A11035872]
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Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage (V-th) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the V-th of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their V-th toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe2 and n-MoS2 channels shows superior voltage gain and minimal power consumption after HAT-CN deposition, compared to its initial performance. When the same TMD FETs of the CMOS structure are integrated into an OLED pixel circuit for ambipolar switching, the circuit with HAT-CN film demonstrates complete ON/OFF switching of OLED pixel, which was not switched off without HAT-CN.
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