4.6 Article

Valence band of ZnO:Yb probed by resonant photoemission spectroscopy

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 91, Issue -, Pages 306-309

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2018.11.037

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Funding

  1. Polish National Centre for Research and Development (NCBiR) [PBS2/A5/34/2013]
  2. Elettra Sincrotrone Trieste [20150152-ELETTRA]
  3. Helmholtz-Zentrum Dresden-Rossendorf [16000696-ST]

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Resonant photoemission spectroscopy (APES), which is a useful tool for extracting photoemission response of the localized Rare Earth (RE) impurity levels from the host electronic band structure, was used to study ZnO:Yb films. The resonant enhancement of the photoemission signal at binding energy around 7.5 and 11.7 eV was observed when photon energy was tuned to the Yb 4d-4f absorption threshold (182 eV). It was found that the 4f and the valence band (VB) maximum binding energies do not depend on the Yb dose, suggesting that the measurement of only one concentration is sufficient to determine the binding energies of the Yb 4f in the examined system. Subsequent annealing did not change the arrangements of implanted ytterbium atoms in host matrix: the majority of them remain in 3 + state having pseudo-octahedral local arrangement similar to Yb2O3.

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